- A master’s degree (or nearing completion) in Electrical Engineering, Semiconductor Physics, Materials Science, or a related field.
- Basic knowledge of semiconductor device physics, preferably wide-bandgap materials (e.g., GaN).
- Experience or coursework in device simulation tools (e.g., Silvaco TCAD) is a plus.
- Strong interest and willingness to learn experimental techniques for device fabrication and characterization.
- Familiarity with electrical measurements (e.g., I-V, C-V) is desirable.
- Proficiency in scientific writing and communication (English).

What is offered: The selected candidate will be offered a fully paid fellowship with a very competitive salary and excellent conditions to excel in their research.

Conditions of employment

Appointment as a PhD fellow is a 3-year salaried position.

The monthly gross salary incl. pension is 35.707DKR. If you have relevant postgraduate experience, you may be placed on a higher salary step.

Applicants must hold a master’s degree (equivalent to a Danish master’s degree) at the time of enrollment and employment. Employment of a PhD fellow can only happen after the PhD School has approved the candidate for admission.

Employment as a PhD fellow governed by the Protocol on PhD Research Fellows signed by the Danish Ministry of Finance and the Danish Confederation of Professional Associations (AC). Further information about salary and conditions of employment.

The successful candidate will be enrolled at SDU in accordance with Faculty regulations and the Danish Ministerial Order on the PhD Programme at the Universities (PhD order).

The person employed in the position may, based on a specific individual managerial assessment, be exempted from time registration, also known as a self-organiser.

The Faculty of Engineering at the University of Southern Denmark (SDU) invites applications for a 3-year position as a Ph.D. in Design, Fabrication, and Characterization of WBG Semiconductors. The position is located in the section of Electrical Engineering in Sønderborg within the Centre for Industrial Electronics (CIE). CIE is embedded in a powerhouse in electronics, which includes researchers and developers at universities and industries on both sides of the Danish-German border. The position starts on September 1, 2025, or as soon as possible thereafter, depending on the agreement with the successful candidate.

CIE Research develops advanced power semiconductor components using cutting-edge technologies. We focus on novel WBG devices, including GaN and SiC, designing them for superior efficiency and performance. Our goal is to create next-generation solutions that tackle key challenges in the semiconductor industry.

We are looking for a motivated candidate for a Ph.D. in the “Next-Generation GaN Devices: Advancing Efficiency and Overcoming Industry Challenges”. This research-industrial project focuses on GaN device technologies to address challenges in power electronics, including renewable energy, electric vehicles, and industrial applications. The candidate will prioritize industry requirements in designing these devices. The role involves designing, developing, and characterizing GaN devices in collaboration with our industry partners.

The candidate will have the opportunity to work on several aspects involved in demonstrating high-performance devices: Numerical simulations, device fabrication in the cleanroom (relying on international partners), and device characterization (relying on the facilities in the CIE lab, for static and dynamic measurements and reliability measurements).


Detailnejšie informácie na portáli EURES Slovensko:
https://www.eures.sk/pracovne-ponuky/pozicia-phd-v-dizajne-vyrobe-a-charakterizacii-polovodicov-dansko/

Kontaktná osoba:
Ing. Ivana Sentpéteryová, EURES poradca
ivana.sentpeteryova@upsvr.gov.sk
0917 530 063